The development of the MEMS technology promotes the development of more effective and more miniaturized Micro Channel. The Micro Channel has wide application perspective due to its fine performance and special structure. Thanks to the efforts of the researchers, Micro Channel can be applied in Micro Channel Plate (MCP), miniaturized total analysis systems, micro exchange device, micro chemical reactor, preparation of micro capsule, etc. Presently, the silicon MCP has attracted much attention due to its high gain low noise, good image resolution ratio, high compatibility and long stability.In this thesis, the oxidation and the affection factors of silicon micro channel plate is studied. Computer simulation has been applied to analysis the oxidation. Several methods have been proposed regarding the problems raised in the oxidation process.Chapter one introduces the micro channel and its application. The fabrication methods of the silicon micro channel are also introduced. The main work of this thesis is briefly introduced.Chapter two studies the mechanism and influencing factors of the technological parameters for the electrochemical etching process for P-type silicon micro channel.Chapter three introduces the main processing flow of fabricating high aspect ratio silicon micro channel.In chapter 4, various situations and problems arising in the oxidation process of the high aspect ratio silicon micro channel are discussed.In chapter five, the problems arising in the oxidation process are theoretically analyzed. The computer simulation software FEMLAB is used to analyze the oxidation of the high aspect ratio silicon micro channel.The last chapter-- chapter six is the summary of this thesis and the prospect of high aspect ratio silicon micro channel in the future.